8541 49 000 0 — Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals: photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED): other

8541 Diodes, transistors and similar semiconductor devices; photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules, whether or not made up into panels; light-emitting diodes (LED); mounted piezo-electric crystals (+): 8541 10 – Diodes, other than photodiodes or light-emitting diodes (LED) – Transistors, other than phototransistors: 8541 21 – – With a dissipation rate of less than 1 W 8541 29 – – Other 8541 30 – Thyristors, dinistors and trinistors, other than photosensitive devices 8541 40 – Photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules, whether or not made up into panels; light-emitting diodes (LED) 8541 50 – Other semiconductor devices 8541 60 – Mounted piezo-electric crystals 8541 90 – Parts

(A) Diodes, Transistors and Analogous Semi-Vehicle Devices These are defined in Note 9(a) to this Chapter. The operation of devices of this category is based on the electronic properties of some "semiconductor" materials. The main property of these materials is that at room temperature their specific conductivity has intermediate values between the specific conductivity of conductors (metals) and dielectrics. They are some ores (nap rimer, crystalline galenite), tetravalent chemical elements (germanium, silicon, etc.) or combinations of chemical elements (e.g., trivalent and pentavalent elements in, such as gallium arsenide, indium antimonide). Semiconductor materials consisting of a tetravalent chemical element are usually monocrystalline. They are used not in pure form, but after a very weak doping (in the ratio expressed in parts per million) with a special impurity (alloying impurity). For a tetravalent element, the impurity may be a pentavalent chemical element (phosphorus, arsenic, antimony, etc.) or a trivalent element (boron, aluminum, gallium, indium, etc.). The former forms n-type semiconductors with an excess of electrons (negatively charged); the latter forms p-type semiconductors with a deficiency of electrons, that is, in which holes (positively charged) predominate. Semiconductor materials based on three- and pentavalent chemical elements are also doped. In semiconductor materials consisting of ores, impurities contained in natural ore serve as alloying impurities. Semiconductor devices in this category typically have one or more "transitions" between p-type and n-type semiconductor materials.

These include: (I) Diodes, which are two-electrode devices with one p-n junction. They allow the current to pass in one (direct) direction, but have a very large resistance in the other (reverse) direction. They are used for detection, straightening, switching, etc. The main types of diodes are: signal diodes, powerful rectifying diodes, stabilizers, reference diodes. Transistors are three- or four-electrode devices designed to amplify, generate or convert the frequency of electric currents. The mode of operation of the transistor depends on the change in resistivity between two electrodes when an electric field is applied to the third electrode. The applied control signal or field is weaker than the resulting effect caused by the change in resistance, and thus result in an amplification effect. (1) Bipolar transistors, which are three-electrode devices consisting of two diode-type transitions whose transistor action depends on both positive and negative charge carriers (therefore called bipolar). (2) Field transistors, also known as metal-oxide-semiconductor (MEO) structures, which may or may not have a transition, but which depend on the impoverishment (or enrichment) of available free charge carriers between two electrodes. Transistor action in a field transistor uses only one type of charge carrier (which is why they are called unipolar). The parasitic diode, which forms in the crystal of MOS transistors (also known as MOPPT), can act as a reverse diode during inductive load shutdown. MOTAPM having four electrodes are called tetrodes. (3) Insulated gate bipolar transistors (BTIZ), which are devices with three electrodes – a gate and two load electrodes (emitter and collector). By applying the appropriate voltage between the gate and the emitter, the current is controlled in one direction, i.e. it can be turned on and off. BTIZ chips can be combined with diodes in one housing (composite BTIZ) to protect BTIZ and ensure its functioning as a transistor. (iii) Similar semiconductor devices: "similar" devices mentioned herein include semiconductor devices whose operation depends on changes in resistivity when an electric field is applied. They include: (1) Thyristors consisting of four conduction zones in semiconductor materials (three or more p-n junctions) through which direct current passes in a predetermined direction when a control pulse initiates conductivity. They are used as controllable rectifiers, switches or amplifiers and operate as two complementary transistors with a common collector. (2) Trinisters (symmetric triode thyristors) having five regions with different conductivity in semiconductor materials (four)

p-n junctions), through which alternating current passes when a control pulse initiates conduction. (3) Diacs, having three regions of polar conductivity in the semiconductor materials (two p-n junctions) and used for producing the pulses required for the operation of a thyristor. (4) Varactors (or variable capacitance diodes). (5) Field-effect devices, e.g., gridistors. (6) Gunn-effect devices. This category does not, however, include semiconductor devices which differ from those described above in that their operation depends primarily on temperature, pressure, etc., such as non-linear semiconductor resistors (thermistors, varistors, magnetoresistors, etc.) (heading 8533). For photosensitive devices whose operation depends on light rays (photodiodes, etc.), see Part (B). The devices described above fall in this heading whether presented mounted, i.e., with their electrodes, leads or connecting conductors, or in a housing (components), unmounted (elements), or even in the form of undiced discs (wafers). However, natural semiconductor materials (e.g., galena) are classified in this heading only when mounted. The heading also excludes chemical elements of Chapter 28 (e.g., silicon and selenium) doped for use in electronics, in the form of discs, wafers or similar forms, whether or not polished and whether or not coated with a uniform epitaxial layer, provided they have not been selectively doped or diffused to create regions of differing conductivity. (B) PHOTOSENSITIVE SEMICONDUCTOR DEVICES This category covers photosensitive semiconductor devices in which the action of visible rays, infra-red rays or ultra-violet rays causes variations in resistivity or generates an electromotive force by the internal photoelectric effect. Photoemissive tubes (photocells), whose operation is based on the external photoelectric effect (photoemission), fall in heading 8540. The main types of photosensitive semiconductor devices are: (1) Photoconductive cells (light-dependent resistors), usually consisting of two electrodes between which there is a semiconductor material (cadmium sulphide, lead sulphide, etc.) whose electrical resistance varies with the intensity of the radiation falling on the cell. These cells are used in flame detectors, in exposure meters for automatic cameras, for counting moving objects, for automatic precision measuring devices, in automatic door-opening systems, etc. (2) Photovoltaic cells, which convert light directly into electrical energy without the need for an external current source. Selenium-based photovoltaic cells are used mainly in luxmeters and exposure meters. Silicon-based photovoltaic cells have a higher quantum yield and are used, in particular, in control and regulating equipment, for detecting light pulses, in fibre-optic communication lines, etc.

Special categories of photovoltaic cells are: (i) Solar cells are silicon pho togalvanic cells that convert sunlight directly into electrical energy. They are commonly used in the form of solar panels as sources of electrical energy, for example, in rockets or satellites used in space exploration, for transmitters used to rescue victims in mountains. This heading also includes solar cells assembled or not assembled in modules, whether or not mounted in panels. However, this heading does not include panels or modules equipped with elements, albeit simple (e.g. diodes for controlling the direction of current), which supply energy directly to, for example, an engine, an electrolyser (heading 8501). (ii) Photodiodes (Germanium, silicon, etc.) characterized by a change in electrical resistance when light rays fall on a p-n junction. They are used in automatic processing of information (reading, memorizing information), as photocathodes in some burly electronic tubes, in radiation pyrometers, etc. Phototransistors and photothyristors belong to this category of photodetectors. Devices of this category differ, when assembled, from diodes, transistors and thyristors of (A) above, with a casing that is partially transparent to allow the passage of light. Optrons and photorelays consisting of electroluminescent diodes in combination with photodiodes, phototransistors or photothyristors. Photosensitive semi-conductor devices are classified in this heading regardless of whether they are assembled (for example, with their electrodes, terminals or connecting conductors), in the housing or unassembled. (B) Light-emitting diodes (LEDs) or electroluminescent diodes (based, inter alia, on gallium arsenide or gallium phosphide) are devices that convert electrical energy into visible, infrared or ultraviolet radiation. They are used, for example, to display or transmit information in control systems. Laser diodes emit a beam of coherent light and are used, for example, in the detection of nuclear particles, in equipment for measuring height or for telemetry, in communication systems using fiber optics. (D) PIESOELECTRIC CRYSTALS IN COLLECTION These include mainly barium titanate crystals (including polycrystalline polarized elements of barium titanate), lead zirconate titanate crystals or other crystals of heading 38 24 (see the relevant explanation), or quartz or tourmaline crystals. They are used in microphones, loudspeakers, ultrasonic equipment, vibrational circuits of stabilized frequency, etc. They belong to this heading only if collected. They are usually made in the form of plates, rods, discs, rings, etc., and must at least be provided with electrodes or electrical connections. They can be coated with graphite, varnish, etc., or mounted on supports, and they are often found inside a cylinder (e.g., metal box, glass bulb). If, however, due to the addition of other components, the finished product (assembly plus crystal) can no longer be regarded as simply assembled.

crystal and identifiable as a specific part of the machine or equipment, such assembly is classified as part of the machine or equipment in question: for example, piezoelectric elements for microphones or loudspeakers (heading 8518), sound-sensor elements (heading 85 22), sensor elements (sensitive elements) of ultrasonic devices for measuring thickness or detecting defects (usually classified in accordance with note 2(b) to chapter 90 or in heading 9033 as the case may be), quartz resonators for electronic clocks (heading 9114). This heading also excludes unassembled piezoelectric crystals (mainly heading 3824, 7103 or 7104). When the general provisions relating to the classification of parts are complied with (see the general provisions of Section XVI), parts of the goods of that heading are included in that heading. Explanation of the subheading. Subheading 8541 21 The dispersion power of a transistor is measured by applying the operating voltage to the instrument and measuring the dispersion power at a body temperature of up to 25 °C. For example, if the transistor is able to withstand a long load current of 0.2 A at an operating voltage of 5 V, while maintaining the body urate of 25 ° C, its dissipation power will be 1 W (current (in amperes) x voltage (in volts) = power (in watts)). For transistors with a heat removal element (e.g., petal, metal housing), the reference temperature of 25 °C will be the bottom or housing temperature, while for other transistors (e.g., with a simple plastic housing), room temperature is applicable.

Notes

Machine translation. The original is the Russian text of the EAEU tariff, and customs goes by it; this translation is for understanding only and has no legal force.

1. This group does not include:

(a) blankets, mattresses, pillows, foot warmers, electrically heated or similar articles; clothing, shoes or headphones or other electrically heated articles used by a person;

(b) glass articles of heading 7011;

(c) machinery and apparatus of heading 8486;

(d) vacuum apparatus used in the medical, surgical, dental or veterinary fields of science (heading 9018); or

(e) Electrically heated furniture of Chapter 94.

2. Headings 8501 to 8504 do not cover the goods of heading 8511, 8512, 8540, 8541 or 8542.

However, mercury arc rectifiers with metal reservoirs are classified in heading 8504.

3. For the purposes of heading 8507, the term “electrical accumulators” applies to electric accumulators presented with additional components that contribute to the storage and supply of energy to the battery or protect it from damage, such as electrical connectors, thermostats (e.g., thermistors) and protective devices. They may also include a portion of the protective casing of the goods in which they will be used.

4. Heading 8509 covers only the following types of electromechanical machinery commonly used in household use:

(a) canvases, food grinders, mixers and juicers for fruits or vegetables of any mass;

(b) other machines weighing not more than 20 kg.

Однако данная товарная позиция не включает вентиляторы или вентиляционные или рециркуляционные вытяжные колпаки или шкафы с вентилятором, с фильтрами или без фильтров (товарная позиция 8414), центробежные сушилки для белья (товарная позиция 8421), посудомоечные машины (товарная позиция 8422), бытовые стиральные машины (товарная позиция 8450), валковые или другие гладильные машины (товарная позиция 8420 или 8451), швейные машины (товарная позиция 8452), электрические ножницы (товарная позиция 8467) или электронагревательные приборы (товарная позиция 8516).

5. For the purposes of heading 8517, the term “smartphones” means telephones for cellular communication networks equipped with a mobile operating system designed to perform computer functions, such as the downloading and simultaneous operation of several applications, including third-party applications, whether or not other components, such as digital cameras and navigation systems, are embedded therein.

6. In heading 8523:

(a) “solid state-of-the-art non-volatile storage devices” (e.g., “flash memory cards” or “electronic flash memory cards”) mean connector storage devices comprising one or more flash memory devices (e.g., “Flash ES ROMs”) in the form of integrated circuits installed on a printed circuit board. They may include an integrated circuit controller and discrete passive components such as capacitors and resistors.

(b) the term “smart cards” means cards that have one or more electronic integrated circuits (a microprocessor, randomly sampled memory (ROM) or permanent memory (ROM)) in the form of crystals. These cards may have contacts, a magnetic strip, or a built-in antenna, but they do not contain any other active or passive elements.

7. For the purposes of heading 8524, the expression “flat display panel modules” refers to display devices or apparatus equipped with at least a display screen which are designed to be incorporated into the articles of other headings before use. In shape, the display screens of such modules can be flat, curved, flexible, folding, stretching or other shapes. Flat display panel modules may include additional components, including those necessary for receiving video signals and distributing them across screen pixels. Heading 8524, however, does not include display modules equipped with components for converting video signals (e.g., a video format conversion integrated circuit, a decoder integrated circuit or an application processor) or otherwise having assumed the character of articles of other headings.

In classifying the flat panel modules referred to in this note, heading 8524 takes precedence over any other heading of the Nomenclature.

8. For the purposes of heading 8534, the term “printed circuits” means circuits made by forming on an insulating substrate by any printing process (e.g., electroplating, etching) or by “film” technology of conductors, contacts, or other printed elements (e.g., inductances, resistors, capacitors) individually or in a particular order, with the exception of elements which are capable of producing, straightening, modulating, or amplifying an electrical signal (e.g., semiconductor elements).

The term "printed circuits" does not include circuits combined with elements other than those obtained in the printing process, as well as individual discrete resistors, capacitors or inductors. Printed circuits, however, may be equipped with connecting elements manufactured by a technology other than printing.

Thin or thick-film circuits employing passive and active elements obtained in the same process are classified in heading 8542.

9. For the purposes of heading 8536, the term “connectors for fibers of optical, fiber-optic harnesses or cables” means connectors which simply mechanically connect the ends of optical fibers in a digital link system. They do not perform any other function, such as amplifying, restoring, or changing a signal.

10. Heading 8537 excludes wireless infrared devices for remote control of television receivers or other electrical equipment (heading 8543).

11. For the purposes of heading 8539, the expression “LED light sources” covers:

(a) "LED modules" are electric light sources based on LEDs connected in electrical circuits and containing additional components such as electrical, mechanical, thermal or optical elements. For supply or control of power, these modules also contain discrete active elements, discrete passive elements or articles of heading 8536 or 8542. LED modules (LED) are not equipped with a cap, facilitating installation or replacement in the lamp, and providing mechanical and electrical contact;

(b) "LED lamps" are electrical light sources containing one or more LED modules containing additional components such as electrical, mechanical, thermal or optical elements. The difference between LED modules (LED) and LED lamps (LED) is that the latter have a cap that facilitates installation or replacement in the lamp, and provides mechanical and electrical contact.

12. In headings 8541 and 8542:

(a) (i) “semiconductor devices” means semiconductor devices whose operation is based on a change in their resistance under the action of an electric field or semiconductor-based transducers.

Semiconductor devices may also comprise an assembly of multiple elements, regardless of whether the devices are provided with active and passive auxiliary functions or not.

For the purposes of this definition, “semiconductor-based transducers” are semiconductor-based sensors, semiconductor-based actuators, semiconductor-based resonators, and semiconductor-based generators that are varieties of discrete semiconductor-based devices that perform a given function and are capable of converting any physical or chemical phenomenon or effect into an electrical signal, or an electrical signal into some physical phenomenon or action.

All elements of transducers based on semiconductors are inextricably combined with each other, and can contain inseparably attached to them materials necessary for their design or functioning.

The following expressions have the following meanings:

(1) “semiconductor-based” means created or manufactured on a semiconductor substrate or made of semiconductor materials, in a semiconductor technology in which a semiconductor substrate or material plays an essential and irreplaceable role in the performance by a converter of its function, the operation of which is based on the properties of the semiconductor, including physical, electrical, chemical and optical properties;

(2) “physical or chemical phenomena” refers to phenomena such as pressure, acoustic waves, acceleration, vibration, motion, orientation, stress, magnetic field strength, electric field strength, light, radioactivity, humidity, flow rate, concentration of chemicals, etc.;

(3) "semiconductor-based sensor" is a type of semiconductor device consisting of microelectronic or mechanical structures that are created in the mass or on the surface of the semiconductor and having the function of determining the values of physical or chemical action and their conversion into electrical signals caused by a change in electrical properties or displacement of the mechanical structure.

(4) "semiconductor-based drive" is a type of semiconductor device consisting of microelectronic or mechanical structures that are created in the mass or on the surface of the semiconductor and having the function of converting electrical signals into physical motion;

(5) "semiconductor-based resonator" is a type of semiconductor device consisting of microelectronic or mechanical structures that are created in the mass or on the surface of the semiconductor, and having the function of generating mechanical or electrical oscillations of a given frequency, depending on the physical geometry of these structures responding to an external input signal;

(6) "semiconductor-based generator" is a type of semiconductor device consisting of microelectronic or mechanical structures that are created in the mass or on the surface of the semiconductor and having the function of generating mechanical or electrical oscillations of a given frequency, depending on the physical geometry of these structures;

(ii) "LEDs (LEDs)" are semiconductor devices based on semiconductor materials that convert electrical energy into visible, infrared or ultraviolet radiation, whether electrically connected or unconnected, combined with protective diodes or not combined. The LEDs of heading 8541 do not contain components intended to provide power supply or control power supply.

(b) "electronic integrated circuits":

(i) monolithic integrated circuits in which circuit elements (diodes, transistors, resistors, capacitors, inductances, etc.) are carried out in mass (mainly) and on the surface of a semiconductor or complex semiconductor material (for example, doped silicon, gallium arsenide, silicohermanium, indium phosphide) and are inseparably linked;

(ii) hybrid integrated circuits in which passive elements (resistors, capacitors, inductances, etc.) made by thin- or thick-film technology processes and active elements (diodes, transistors, monolithic integrated circuits, etc.) obtained by semiconductor technology processes are connected into a single inseparable whole by interconnections or connecting cables on a single insulating substrate (glass, ceramics, etc.). Such circuits may also contain discrete components;

(iii) multi-crystal integrated circuits consisting of two or more interconnected monolithic integrated circuits, inseparably combined into a single whole, located or not located on one or more insulating substrates, having or not having a frame with terminals, but containing no other active or passive elements;

(iv) multi-component integrated circuits consisting of one or more monolithic, hybrid or multi-crystal integrated circuits combined with at least one of the following components: silicon-based sensors, silicon-based actuators, silicon-based generators, silicon-based resonators or combinations thereof, or components performing the functions of articles classified in headings 8532, 8533, 8541, or inductors classified in heading 8504, inseparably combined in a single integrative form of a single integrated circuit, carried by means of a connection with a printed terminal or other terminal.

In this definition:

(1) “Components” may be discrete, produced independently, then installed on the rest of the multi-component integrated circuit, or integrated into other components;

(2) “Silicon-based” means that they are made on a silicon substrate, or are made of silicon, or are made on an integrated circuit chip;

(3)(a) “silicon-based sensors” consist of microelectronic or mechanical structures that are created in the mass or on the surface of the semiconductor and have the function of detecting physical or chemical phenomena and converting them into electrical signals caused by a change in electrical properties or displacement of the mechanical structure. “Physical or chemical phenomena” refer to phenomena such as pressure, acoustic waves, acceleration, vibration, motion, orientation, stress, magnetic field strength, electric field strength, light, radioactivity, humidity, flow rate, concentration of chemicals, etc.;

(b) “silicon-based actuators” consist of microelectronic and mechanical structures that are created in the mass or on the surface of the semiconductor and that have the function of converting electrical signals into physical motion;

(c) “silicon-based resonators” are components that consist of microelectronic or mechanical structures that are created in the mass or on the surface of a semiconductor and that have the function of generating mechanical or electrical oscillations of a given frequency depending on the physical geometry of these structures responding to an external input signal;

(d) “silicon-based generators” are active components that consist of microelectronic or mechanical structures that are created in the mass or on the surface of a semiconductor and that have the function of generating mechanical or electrical oscillations of a given frequency depending on the physical geometry of those structures.

In classifying the articles referred to in this note, headings 8541 and 8542 shall take precedence over any other heading of the Nomenclature which may include those articles in accordance with, in particular, their function, with the exception of heading 8523.

Subheading notes

English text as published in Annex I to Regulation (EU) 2021/1832 (Combined Nomenclature). The EAEU tariff and the EU nomenclature copy these notes from the same convention. For a Russian declaration the binding version is the Russian one: Annex to Decision No 80 of the EEC Council of 14 September 2021.

1. Subheading 8525 81 covers only high-speed television cameras, digital cameras and video camera recorders having one or more of the following characteristics: - writing speed exceeding 0,5 mm per microsecond; - time resolution 50 nanoseconds or less; - frame rate exceeding 225 000 frames per second.

2. In respect of subheading 8525 82, radiation-hardened or radiation-tolerant television cameras, digital cameras and video camera recorders are designed or shielded to enable operation in a high-radiation environment. These cameras are designed to withstand a total radiation dose of at least 50 × 103 Gy(silicon) (5 × 106 RAD (silicon)), without operational degradation.

3. Subheading 8525 83 covers night vision television cameras, digital cameras and video camera recorders which use a photocathode to convert available light to electrons, which can be amplified and converted to yield a visible image. This subheading excludes thermal imaging cameras (generally subheading 8525 89).

4. Subheading 8527 12 covers only cassette-players with built-in amplifier, without built-in loudspeaker, capable of operating without an external source of electric power and the dimensions of which do not exceed 170 mm × 100 mm × 45 mm.

5. For the purposes of subheadings 8549 11 to 8549 19, ‘spent primary cells, spent primary batteries and spent electric accumulators’ are those which are neither usable as such because of breakage, cutting-up, wear or other reasons, nor capable of being recharged.

Additional notes

Machine translation. The original is the Russian text of the EAEU tariff, and customs goes by it; this translation is for understanding only and has no legal force.

1. Subheadings 8519 20 100 0, 8519 30 000 0 and 8519 89 110 0 do not include sound-reproducing apparatus with a laser reading system.

2. Примечание к субпозиции 4 применимо при внесении соответствующих изменений к подсубпозициям 8519 81 150 0 и 8519 81 650.

3. For the purposes of subheadings 8528 71 150 0 and 8528 71 910 0 only, the term “modem” means devices or equipment which modulate outgoing and demodulate incoming signals, such as V.90 modems or cable modems and other devices which use similar technologies to access the Internet via WLAN, ISDN and Ethernet. Access to the Internet may be limited by the service provider.

The apparatus of these subheadings shall provide for a bidirectional communication process or a bidirectional flow of information in order to facilitate the interactive exchange of information.

Additional notes of the Eurasian Economic Union

Machine translation. The original is the Russian text of the EAEU tariff, and customs goes by it; this translation is for understanding only and has no legal force.

1. For the purposes of subheading 8542 31 100 1, the term “process not exceeding 32 nanometers” means a process for the manufacture of electronic integrated circuits in accordance with the technological standards of which the gates of the logical transistors of a microprocessor do not exceed 32 nanometers. Logical transistors are the main computational elements of a microprocessor that implement all arithmetic and logical operations. The gate is the control element of the transistor. Data on the technological process of manufacturing microprocessors are given in the manufacturer's technical documentation, which may be submitted by its authorized representative in the member states of the Eurasian Economic Union.

2. For the purposes of subheading 8535 90 000 1, the term “passage insulators” means devices attached to the flanges of the compartments of modules forming part of a complete switchgear of an elegasic unit (CSG) and intended to separate gas volumes between these compartments or to combine the various CSG modules into a single gas volume, as well as connections through the electrodes of conductors of the CSGM modules built into the passage insulators among themselves during the assembly of the CSGM. Passage insulators are gas dense and non-gas dense. With the help of gas-dense insulators, the gas volumes of KREE are separated. With the help of non-gas-dense insulators, various CSRE modules are combined into one gas volume. Passage insulators consist of a flange ring, a cast insulator and electrodes poured into the insulator.